unisonic technologies co., ltd ug8j npn silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2005 unisonic technologies co., ltd qw-r222-002,a emitter common (dual digital transistors) features * two dtc143z chips in a sot-353 package. * mounting cost and area can be cut in half. structure * epitaxial planar type * npn silicon transistor (built-in resistor type) sot-353 4 5 3 2 1 *pb-free plating product number: ug8jl ordering information order number pin assignment normal lead free plating package 1 2 3 4 5 packing UG8J-AL5-R UG8J-AL5-R sot-353 b1 e1,e2 b2 c2 c1 tape reel ug8jl-al5-r (1)packing type (2)package type (3)lead plating (1) r: tape reel (2) al5: sot-353 (3) l: lead free plating, blank: pb/sn marking information ug8j lead plating
ug8j npn silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r222-002,a absolute maximum rating (ta=25 ) parameter symbol ratings unit supply voltage v cc 50 v 30 input voltage v in -5 v i out 100 output current i c(max) 100 ma total power dissipation p d 150 (note1) mw junction temperature t j +150
storage temperature t stg -40 ~ +150
note 1. *120mw per element must not be exceeded. 2. absolute maximum ratings are those values beyond which the device c ould be permanently damaged. absolute maximum ratings are stress ratings onl y and functional device operat ion is not implied. electrical characteristics (ta=25 ) parameter symbol test conditions min typ max unit v i(off) v cc =5v, i out =100a 0.5 input voltage v i(on) v out =0.3v, i out =5ma 1.3 v output voltage v o(on) i out= 5ma, i in =0.25ma 0.1 0.3 v input current i in v in =5v 1.8 ma output current i o(off) v cc =50v, v in =0v 0.5 a dc current gain g i v out =5v, i out =10ma 80 transition frequency f t v ce =10v, i e =-5ma, f=100mhz* 250 mhz input resistance r 1 3.29 4.7 6.11 k ? resistance ratio r 2 /r 1 8 10 12 note * transition frequency of the device. equivalent circuit (the following characteristic apply to both dt r1 and dt r2 ) r 1 r 2 r 2 r 1 (3) (2) (1) dt r2 (4) (5) dt r1 r 1 =4.7k $ r 2 =4.7k $
ug8j npn silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r222-002,a typical characteristics ta=-20 25 100 input voltage vs. output current (on characteristics) 100 v out =0.3v 200 500 1m 2m 5m 10m 20m 50m 100m 100m 200m 500m 2 5 20 50 100 input voltage, v i(o n) (v) output current, i out (a) 1 10 output current vs. input voltage (off characteristics) 1 0.5 output current, i out (a) input voltage, v i(off) (v) 1 01.5 2. 5 2.0 3.0 2 5 10 20 50 100 200 500 1m 2m 5m 10m v cc =5v ta=100 25 -20 dc current gain vs. output current v out =5v 50 200 500 1k dc current gain, g i output current, i out (a) ta=100 25 -20 1 2 5 10 20 100 100 200 500 1m 2m 5m 10m 20m 50m 100m output voltage vs. output current i out /i in =20 outptut voltage, v o(on) (v) output current, i out (a) ta=100 25 -20 1m 2m 5m 10m 20m 50m 100m 200m 500m 1 100 200 500 1m 2m 5m 10m 20m 50m 100m utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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